 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MBR10H150CT, MBRF10H150CT & SB10H150CT-1 Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 A TO-220AB ITO-220AB FEATURES * Guardring for overvoltage protection * Low power loss, high efficiency * Low forward voltage drop * High frequency operation 1 2 3 1 2 3 * Solder dip 260 C, 40 seconds * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, free-wheeling and polarity protection applications. MBR10H150CT MBRF10H150CT TO-262AA 1 2 3 SB10H150CT-1 PIN 1 PIN 3 PIN 2 CASE MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-262AA Epoxy meets UL 94V-0 flammability rating PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF Tj 2x5A 150 V 160 A 0.72 V 175 C Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade Mounting Torque: 10 in-lbs maximum Polarity: As marked MAXIMUM RATINGS (TC = 25 C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current (see Fig. 1) Total device per diode SYMBOL VRRM VRWM VDC IF(AV) IFSM IRRM ERSM EAS dv/dt TJ, TSTG VAC MBR10H150CT 150 150 150 10 5 160 1.0 10 11.25 10000 - 65 to + 175 1500 UNIT V V V A A A mJ mJ V/s C V Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Peak repetitive reverse current per diode at tp = 2 s, 1 kHz Peak non-repetitive reverse surge energy per diode (8/20 s waveform) Non-repetitive avalanche energy per diode at 25 C, IAS = 1.5 A, L = 10 mH Voltage rate of change (rated VR) Operating junction and storage temperature range Isolation voltage (ITO-220AB only) From terminals to heatsink t = 1 minute Document Number: 88779 Revision: 27-Jul-07 www.vishay.com 1 MBR10H150CT, MBRF10H150CT & SB10H150CT-1 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS at IF = 5.0 A, TJ = 25 C Maximum instantaneous forward voltage per diode (1) at IF = 5.0 A, TJ = 125 C at IF = 10 A, TJ = 25 C at IF = 10 A, TJ = 125 C Maximum reverse current per diode at working peak reverse voltage (1) Note: (1) Pulse test: 300 s pulse width, 1 % duty cycle TJ = 25 C TJ = 125 C IR VF SYMBOL VALUE 0.88 0.72 0.96 0.80 5.0 1.0 A mA V UNIT THERMAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL RJC MBR 2.4 MBRF 4.5 MBRB 2.4 UNIT C/W ORDERING INFORMATION (Example) PACKAGE TO-220AB ITO-220AB TO-262AA PREFERRED P/N MBR10H150CT-E3/45 MBRF10H150CT-E3/45 SB10H150CT-1E3/45 UNIT WEIGHT (g) 2.06 2.20 1.58 PACKAGE CODE 45 45 45 BASE QUANTITY 50/Tube 50/Tube 50/Tube DELIVERY MODE Tube Tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 12 MBR, MBRB 10 MBRF 8 200 TJ = TJ max. 8.3 ms Single Half Sine-Wave Peak Forward Surge Current (A) 180 160 140 120 100 80 60 40 20 0 1 Average Forward Current (A) 6 4 2 0 25 50 75 100 125 150 175 10 100 Case Temperature (C) Number of Cycles at 60 Hz Figure 1. Forward Derating Curve (Total) Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 Document Number: 88779 Revision: 27-Jul-07 MBR10H150CT, MBRF10H150CT & SB10H150CT-1 Vishay General Semiconductor 100 10000 Instantaneous Forward Current (A) TJ = 175 C 10 TJ = 125 C TJ = 75 C 1 Junction Capacitance (pF) 1000 100 TJ = 25 C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 10 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 10000 100 TJ = 175 C Instantaneous Reverse Current (A) 1000 TJ = 125 C 100 Transient Thermal Impedance (C/W) 10 MBRF 10 TJ = 75 C 1 MBR, MBRB 1 0.1 0.01 10 20 30 40 50 60 TJ = 25 C 70 80 90 100 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode Document Number: 88779 Revision: 27-Jul-07 www.vishay.com 3 MBR10H150CT, MBRF10H150CT & SB10H150CT-1 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) T O -220AB 0.055 (1.40) 0.047 (1.20) 0.398 (10.10) 0.382 (9.70) 0.343 (8.70) Typ. ITO-220AB 0.185 (4.70) 0.169 (4.30) 0.055 (1.40) 0.049 (1.25) 0.408 (10.36) 0.392 (9.96) 1.29 (3.28) Dia. 1.21 (3.08) 0.138 (3.50) 0.122 (3.10) 0.270 (6.88) 0.255 (6.48) 0.150 (3.80) Dia. 0.139 (3.54) 0.114 (2.90) 0.106 (2.70) 0.154 (3.90) 0.138 (3.50) 0.193 (4.90) 0.177 (4.50) 0.108 (2.74) 0.092 (2.34) 0.067 (1.70) Typ. 0.331 (8.40) Typ. 0.634 (16.10) 0.618 (15.70) 1 0.118 (3.00) Typ. PIN 23 0.370 (9.40) 0.354 (9.00) 1.161 (29.48) 1.106 (28.08) 0.523 (13.28) 0.507 (12.88) 0.638 (16.20) 0.598 (15.20) 0.630 (16.00) 0.614 (15.60) 0.264 (6.70) 0.248 (6.50) 0.320 (8.12) 0.304 (7.72) 0.633 (16.07) 0.601 (15.67) 0.102 (2.60) 0.087 (2.20) 1 PIN 2 3 0.117 (2.96) 0.101 (2.56) 0.035 (0.90) 0.028 (0.70) 0.100 (2.54) Typ. 0.064 (1.62) 0.056 (1.42) 0.200 (5.08) Typ. 0.396 (10.05) 0.372 (9.45) 0.024 (0.60) 0.018 (0.45) 0.039 (1.00) 0.024 (0.60) 0.100 (2.54) Typ. 0.058 (1.47) Max. 0.200 (5.08) Typ. 0.024 (0.60) 0.018 (0.45) TO-262AA 0.398 (10.10) 0.382 (9.70) 0.055 (1.40) 0.039 (1.00) 0.185 (4.70) 0.169 (4.30) 0.055 (1.40) 0.049 (1.25) K 0.370 (9.40) 0.354 (9.00) 1 PIN 2 0.425 (10.80) 0.393 (10.00) 3 0.488 (12.4) 0.472 (12.00) 0.102 (2.60) 0.087 (2.20) 0.523 (13.28) 0.507 (12.88) 0.405 (10.28) 0.389 (9.88) 0.035 (0.90) 0.028 (0.70) 0.100 (2.54) Typ. 0.062 (1.57) 0.054 (1.37) 0.200 (5.08) Typ. 0.024 (0.60) 0.018 (0.45) www.vishay.com 4 Document Number: 88779 Revision: 27-Jul-07 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
Price & Availability of SB10H150CT-1
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |